Apparatuses and methods for fixing a logic level of an internal signal line

ABSTRACT

An apparatus includes a first external terminal, a first circuit, a signal line and a second circuit. The first external terminal receives at least one of data mask information and data bus inversion information. The first circuit performs one of an error check operation and a data bus inversion operation. The signal line is coupled between the first external terminal and the first circuit. The second circuit is coupled to the signal line and first a voltage level of the signal line at a substantially constant level responsive to a first control signal.

PRIORITY

This application is a divisional of pending U.S. application Ser. No.14/678,375 filed Apr. 3, 2015, and issued as U.S. Pat. No. 9,983,925 onMay 29, 2018, which application is based upon and claims the benefit ofpriority from Japanese Patent Applications No. 2014-082222 filed on Apr.11, 2014 and No. 2014-088960 filed on Apr. 23, 2014. The aforementionedapplication, patent, and disclosures are incorporated herein byreference, in their entirety, for any purpose.

BACKGROUND

Recently, a DDR (Double Data Rate) 4 DRAM (Dynamic Random Access Memory)which has faster processing speed than a DDR 3 DRAM has been used. TheDDR 4 DRAM has additional functions that are not included in the DDR 3DRAM, such as a CRC (Cycle Redundancy Check) function and DBI (Data BusInversion) function. Japanese Patent Application Laid-Open No.2013-73664 discloses the CRC function which is for checking whether anerror is included in write data. Japanese Patent Application Laid-OpenNo. 2011-187153 shows the DBI function which is for reducing currentconsumption resulting from data transfer by reversing the logical levelof read data or write data, that is input or output simultaneously whena given condition is met.

According to the CRC function, the DRAM performs logic operations onwrite data to generate a CRC code, and compares the generated CRC codewith an input CRC code, thereby checking whether an error is included inthe write data.

The CRC code is generated based on not only the write data but also aninput signal from a data mask terminal. Input signals from the data maskterminal include data mask signals and data bus inversion signalsrelated to the above DBI function.

The DDR 4 DRAM includes a register called a multipurpose register thatis separate from a memory cell array. During initialization followingpower on, a training operation using the multi-purpose register iscarried out to minutely adjust read timing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a functional block diagram of a semiconductor device accordingto an embodiment of the present invention;

FIG. 2 is a functional block diagram of a data processing systemincluding the semiconductor device according to the embodiment of thepresent invention;

FIG. 3 is a functional block diagram of a part of the semiconductordevice that is related to a write operation according to the embodimentof the present invention;

FIG. 4 depicts order of burst input of write data and data mask signals;

FIG. 5 is a circuit diagram of a verification circuit according to theembodiment of the present invention;

FIG. 6 is a circuit diagram showing a configuration of an input bufferand a serial/parallel conversion circuit according to the embodiment ofthe present invention;

FIG. 7 is a circuit diagram of a deserializer according to theembodiment of the present invention;

FIG. 8 is a circuit diagram of a protection circuit according to theembodiment of the present invention;

FIG. 9 is a first timing chart according to the embodiment of thepresent invention;

FIG. 10 is a second timing chart according to the embodiment of thepresent invention;

FIG. 11 is a circuit diagram of the deserializer according to theembodiment of the present invention;

FIG. 12 is a functional block diagram of a data processing systemincluding the semiconductor device according to another embodiment ofthe present invention;

FIG. 13 is a diagram for explaining a function of a data bus inversioncircuit according to the embodiment of the present invention;

FIG. 14 is a functional block diagram of a part of the semiconductordevice that is related to a read operation according to the embodimentof the present invention;

FIG. 15 is a circuit diagram of a part of an invert circuit according tothe embodiment of the present invention;

FIG. 16 depicts an operation of a control circuit according to theembodiment of the present invention; and

FIG. 17 is a timing chart showing a training operation of thesemiconductor device according to the embodiment of the presentinvention;

DETAILED DESCRIPTION

Certain details are set forth below to provide a sufficientunderstanding of embodiments of the invention. However, it will be clearto one skilled in the art that embodiments of the invention may bepracticed without these particular details. Moreover, the particularembodiments of the present invention described herein are provided byway of example and should not be used to limit the scope of theinvention to these particular embodiments. In other instances, wellknown circuits, control signals, timing protocols, and softwareoperations have not been shown in detail in order to avoid unnecessarilyobscuring the invention.

FIG. 1 is a block diagram showing the functional block diagram of asemiconductor device 10 according to embodiments of the presentinvention.

The semiconductor device 10 of the embodiments is a DRAM integrated inone semiconductor chip. As shown in FIG. 1, the semiconductor device 10includes a memory cell array 11 divided into n+1 banks.

The memory cell array 11 has plural word lines WL and bit lines BLintersecting with each other, and memory cells MC arranged at theintersections of the word lines WL and bit lines BL. A word line WL isselected by the row decoder 12, while a bit line BL is selected by acolumn decoder 13. Each bit line BL is connected to a respective senseamplifier SA in a sense circuit 14, and a bit line BL selected by thecolumn decoder 13 is connected to a data controller 15 via the senseamplifier SA. The data controller 15 includes a main amplifier and anerror check circuit, which will be described later, and is connected toa data input/output circuit 17 via an FIFO circuit 16. The datainput/output circuit 17 inputs and outputs data via a data input/outputterminal 21.

In addition to the data input/output terminal 21, the semiconductordevice 10 also includes other external terminals, such as strobeterminals 22 and 23, clock terminals 24 and 25, a clock enable terminal26, an address terminal 27, a command terminal 28, an alert terminal 29,power terminals 30 and 31, a DM/DBI terminal 32, and an ODT terminal 33.

The clock terminals 24 and 25 receive external clock signals CK and /CK,respectively. In this specification, a signal with a “/” at thebeginning of a signal name represents an inverted signal of acorresponding signal, or represents a low-active signal. A clockgenerator 40 is activated based on a clock enable signal CKE, andgenerates an internal clock signal ICLK. A DLL circuit 41 generates aphase-controlled output clock signal LCLK, based on the external clocksignals CK and /CK.

The address terminal 27 receives an address signal ADD. A row controlcircuit 50 is a circuit block including an address buffer 51 and arefresh counter 52. A column control circuit 60 is a circuit blockincluding an address buffer 61 and a burst counter 62.

Information indicative of an operation mode of the semiconductor device10 is registered in a mode register 42. Information registered in themode register 42 at least includes information indicative of whether ornot to carry out a data masking operation on write data DQ based on datamask signals DM (data mask information), and information indicative ofwhether or not to carry out an error check operation at the error checkcircuit, that is, information indicative of whether or not to activate aCRC function. When the data masking operation is disabled (DM disablemode) and the error check operation is enabled (CRC enable mode), themode register 42 activates a protection signal SEL. In other words, whenthe data masking operation is enabled (DM enable mode) or the errorcheck operation is disabled (CRC disable mode), the protection signalSEL is deactivated.

Other information registered in the mode register 42 includesinformation indicative of whether or not to use the multi-purposeregister 20 and information indicative of whether or not to enable a DBIfunction.

When a use of the multi-purpose register 20 is disabled, a readoperation and a write operation are performed on the memory cell array11. When the use of the multi-purpose register 20 is enabled, the readoperation and the write operation are performed on the multi-purposeregister 20. During a training operation, therefore, the use of themulti-purpose register 20 is enabled.

When the DBI function is enabled, the semiconductor device 10 provide acontroller with data bus invention signals DB (data bus inversioninformation) which indicate whether or not the logic level of read dataDQ is inverted. When the DBI function is disabled, the logic level ofthe read data DQ is not inverted, therefore, the data bus inversionsignals DBI are invalidated.

The use of the multi-purpose register 20 is enabled or disabledresponsive to a mode signal MODE1/2 provided by the mode register 42.Similarly, the DBI function is enabled or disabled responsive to a modesignal MODE3/4 provided by the mode register 42.

The command terminal 28 receives a command signal. The command decoder43 generates an internal command ICMD, based on the command signal CMD.A control logic circuit 44 controls operations of the row controlcircuit 50, the column control circuit 60, the data controller 15, etc.,based on the internal command ICMD.

The power terminals 30 and 31 are supplied with power voltages VDD andVSS, respectively.

The DM/DBI terminal 32 receives the data mask signals DM, and outputsdata bus inversion signals DBI. The ODT terminal 33 is a terminalsupplied with a termination signal ODT.

FIG. 2 is a functional block diagram of a data processing system 200including the semiconductor device 10 according to a first embodiment ofthe present invention.

The data processing system 200 of FIG. 2 includes the semiconductordevice 10 and a controller 210 that controls the semiconductor device10. The controller 210 includes a main circuit 211 that generates writedata DQ and the data mask signals DM, and an error check signalgeneration circuit 212 that generates a CRC code. The error check signalgeneration circuit 212 performs a CRC operation (an error checkoperation) on the write data DQ and the data mask signals DM, andthereby generates the CRC code corresponding to the write data DQ anddata mask signals DM. The word error check operation herein may includenot only the CRC operation but also other error check operations.Furthermore, the word error check operation herein may also include notonly error check operations but also error correction operations such asan ECC operation. The CRC code generated by the error check signalgeneration circuit 212 is added to the end of the write data DQ, and isburst output from the controller 210 through an output buffer 213 andburst input to the semiconductor device 10. The data mask signals DM areburst output from the controller 210 through an output buffer 214 andburst input to the semiconductor device 10.

The write data DQ, data mask signals DM, and CRC code burst input to thesemiconductor device 10 are input to the error check circuit 90. Theerror check circuit 90, which will be described in detail later,performs CRC operation on the write data DQ and the data mask signalsDM, and thereby generates a CRC code (first encoded signal). The errorcheck circuit 90 may perform the same CRC operation as that performed bythe error check signal generation circuit 212 in the controller 210. Theerror check circuit 90 then compares the CRC code generated thereby withthe CRC code provided by the controller 210, and determines whether bothcodes match or not. By this process, whether or not an error is includedin the write data DQ or data mask signals DM can be determined.

When it is determined that no error is included in the write data DQ ordata mask signals DM, the write data DQ are written into the memory cellarray 11. When the data mask signals DM are activated, the write data DQis masked to prohibit writing of the write data. DQ to the memory cellarray 11.

The semiconductor device 10 of this embodiment will be further describedin detail below with focusing on the write operation. It is assumedthat, in this embodiment, the DBI function is disabled.

FIG. 3 is a functional block diagram of a part of the semiconductordevice 10 that is related to the write operation.

As shown in FIG. 3, according to this embodiment, the semiconductordevice 10 includes 8 data input/output terminals 21, front which writedata DQj0 to DQj7 (j=0 to 7) of 8 bits are input to the semiconductordevice 10 via an input buffer 17 a. Because the DDR 4 DRAM employs an8-bit pre-fetch method, write data DQ0 k to DQ7 k (k=0 to 7) of 8 bitsare burst input to one data input/output terminal 21 for one writeoperation. As shown in FIG. 4, according to this embodiment, followingburst input of the write data DQ, a CRC code of one bit is provided toeach data input/output terminal 21 via the input buffer 17 a. For onewrite operation, therefore, the write data DQ of 64 bits and CRC codesof 8 bits, i.e., signals of 72 bits in total, are supplied via the datainput/output terminals 21. Out of these signals of 72 bits (DQ, CRC),the write data DQ of 64 bits are converted into parallel signals througha serial/parallel conversion circuit (S/P) 16 a included in the FIFOcircuit 16, and the CRC codes of 8 bits are converted into parallelsignals through a serial/parallel conversion circuit (S/P) 16 c includedin the FIFO circuit 16.

Meanwhile, to the DM/DBI terminal 32, data mask signals DM0 to DM7 of 8bits are burst input via an input buffer 17 b in synchronization withburst input of the write data DQ0 k to DQ7 k. If the data mask signalsDMj are at an active level, it invalidates the write data DQj0 to DQj7of 8 bits input at the timing of burst input of each data mask signals.The data mask signals DM0 to DM7 of 8 bits are converted into parallelsignals through a serial/parallel conversion circuit (S/P) 16 b includedin the FIFO circuit 16.

The write data DQ of 64 bits output from the serial/parallel conversioncircuit 16 a are supplied to a 64-bit wide data line DB. The data masksignals DM of 8 bits output from the serial/parallel conversion circuit16 b are supplied to a 8-bit wide data mask line DMB. As shown in FIG.3, each of the data line DB and the data mask line DMB is coupled to amain amplifier 80 via an error control circuit 70. These error controlcircuit 70 and main amplifier 80 are circuit blocks included in the datacontroller 15 of FIG. 1.

The write data DQ of 64 bits provided by the serial/parallel conversioncircuit 16 a, the CRC codes of 8 bits provided by the serial/parallelconversion circuit 16 c, and the data mask signals DM of 8 bits providedby the serial/parallel conversion circuit 16 b, i.e., signals of 80 bitsin total, are supplied to the error check circuit 90 included in thedata controller 15. The error check circuit 90 performs CRC operationand comparison, using these signals of 80 bits, and thereby determineswhether or not an error is included in the write data DQ or data masksignals DM. When it is determined that an error is included in the writedata DQ or data mask signals DM, an error signal ERR is set to an activelevel. When an error is not included, an error signal ERR is set to aninactive level.

The write data DQ and data mask signals DM having passed through theerror control circuit 70 are supplied to the main amplifier 80. Out ofthe write data DQ of 64 bits, the main amplifier 80 writes a block ofwrite data DQ corresponding to data mask signals DM at the inactivelevel to the memory cell array 11, while suspends writing of a block ofwrite data DQ corresponding to data mask signals DM at the active levelto the memory cell array 11. In this manner, writing of the write dataDQ is controlled based on the data mask signals DM.

When the error signal ERR is set to the active level, the error controlcircuit 70 changes all of the data mask signals DM0 to DM7 of 8 bits onthe data mask line DMB into the active level, regardless of the logiclevel of the data mask signals DM supplied from the controller 210. As aresult, when an error is included in a block of write data DQ, writingof the entire block of write data DQ is suspended. The error signal ERRis supplied also to an output circuit 45 shown in FIG. 1. This allowsthe controller 210 to check the occurrence of a CRC error.

FIG. 5 is a circuit diagram of the error check circuit 90.

As shown in FIG. 5, the write data DQ of 64 bits, the data mask signalsDM of 8 bits, and the CRC codes of 8 bits are input to the error checkcircuit 90. The write data DQ of 64 bits are input via the data line DB,and the data mask signals DM of 8 bits are input via the data mask linesDMB. The write data DQ of 64 bits and data mask signals DM of 8 bits aresupplied to an operation circuit 91, which performs predetermined CRCoperation to generate CRC codes of 8 bits.

To generate each of bits CRC0 a to CRC7 a making up the CRC codes, atleast one of the data mask signals DM0 to DM7 is used for operation.This means that even when the DM disable mode is selected, CRC operationrequires the data mask signals DM0 to DM7.

The CRC codes generated by the operation circuit 91 are compared by acomparator circuit 92 with externally input CRC codes. The comparatorcircuit 92 carries out its comparison operation in such a way that itcompares each of bits CRC0 to CRC7 making up the externally input CRCcodes with each of bits CRC0 a to CRC7 a making up the CRC codesgenerated by the operation circuit 91 to determine whether all of thebits of both codes match or not. As shown in FIG. 5, the comparatorcircuit 92 includes 8 exclusive-OR circuits 93-0 to 93-7 that compareeach pair of bits, and an 8-input OR-gate circuit 94 that receivesoutput signals from the exclusive-OR circuits 93-0 to 93-7.

In this configuration, if any one of the bits CRC0 to CRC7 of theexternally input CRC codes does not match a respective one of the bitsCRC0 a to CRC7 a of the CRC codes generated by the operation circuit 91,an output signal from the comparator circuit 92 becomes a high level.The output signal from the comparator circuit 92 is latched by a latchcircuit 95 in synchronization with a clock signal CRCCLK.

The latch circuit 95 then outputs an error signal ERR, which is suppliedto the error control circuit 70 of FIG. 3.

FIG. 6 is a circuit diagram showing a configuration of the input buffer17 b and the serial/parallel conversion circuit 16 b.

As shown in FIG. 6, the input buffer 17 b compares a voltage level atthe DM/DBI terminal 32, to which the data mask signals DM may be input,with the voltage level of a reference voltage VREF, and therebygenerates output signals DWRD. The input buffer 17 b is activated by anenable signal DMEN, which is indicative of whether or not a data maskingoperation is enabled and is supplied from the mode register 42. When DMdisable mode is selected, therefore, the input buffer 17 b isdeactivated regardless whether or not the error check operation isenabled, and accordingly current consumption is suppressed.

When the enable signal DMEN is a high level, that is, the DM enable modeis selected, the input buffer 17 b operates in synchronization with aninternal strobe signal IDQS provided from a strobe circuit 18. Theinternal strobe signal IDQS is generated based on complementary externalstrobe signals DQST and DQSB that are input to the strobe terminals 22and 23.

The output signals DWRD and internal strobe signal IDQS are supplied tothe serial/parallel conversion circuit 16 b. The serial/parallelconversion circuit 16 b includes a write FIFO circuit 101 and adeserializer 102.

Receiving the output signals DWRD and internal strobe signal IDQS, thewrite FIFO circuit 101 performs serial/parallel conversion and outputsthe data mask signals DM to data mask lines DWFIFO0 to DWFIFO3 with4-bit wide by time sharing data transfer. Because the data mask signalsDM0 to DM7 of 8 bits are burst input to the DM/DBI terminal 32, asdescribed above, the write FIFO circuit 101 transfers the data masksignals DM0 to DM7 of 8 bits to the data mask lines DWFIFO0 to DWFIFO3 4bits by 4 bits through two cycles of time sharing data transfer.

The data mask signals DM0 to DM7 transferred via the data mask linesDWFIFO0 to DWFIFO3 are input to the deserializer 102. Performingserial/parallel conversion, the deserializer 102 transfers the data masksignals DM0 to DM7, which are input to the deserializer 102 4 bits by 4bits through two cycles of time sharing transfer, to data mask linesDMB0 to DMB7 with 8-bit wide. The operation of the deserializer 102 iscontrolled by clock signals DQSHLCK, DWCLK0, and DWCLK1 and a protectionsignal SEL.

FIG. 7 is a circuit diagram of the deserializer 102.

As shown in FIG. 7, the deserializer 102 has four latch circuit blocks110 coupled to data mask lines DMB0 to DMB3, respectively, and fourlatch circuit blocks 120 coupled to data mask lines DMB4 to DMB7,respectively. The four latch circuit blocks 110 are identical in circuitconfiguration with one another, and the four latch circuit blocks 120are also identical in circuit configuration with one another.

Each of the latch circuit blocks 110 has a latch circuit 111, aprotection circuit 112, latch circuits 113 and 114, and a tri-statebuffer circuit 115 that are connected in series between any one of thecorresponding data mask lines DWFIFO0 to DWFIFO3 and any one of thecorresponding data mask lines DMB0 to DMB3.

Each of the latch circuits 111, 113, and 114 has an input node a, anoutput node b, and a selection node c. When a high level signal is inputto the selection node c, each latch circuit outputs a signal supplied toits input node a, directly from its output node b. When a signalsupplied to the selection node c changes from a high level to a lowlevel, the latch circuit latches a signal supplied to the input node a,and outputs the latched signal from the output node b during a period inwhich the signal input to the selection node c remains a low level.

The selection node c of the latch circuit 111 receives an inversionsignal generated by inverting a clock signal DQSHLCK, the selection nodec of the latch circuit 113 receives an inversion signal generated byinverting the clock signal DWCLK0, and the selection node c of the latchcircuit 114 receives a signal from an OR-gate circuit 116. The OR-gatecircuit 116 outputs the logical sum of the protection signal SEL and asignal generated by inverting the clock signal DWCLK1.

The tri-state buffer circuit 115 is activated when the clock signalDWCLK1 is a high level, and is put in high-impedance state when theclock signal DWCLK1 is a low level. The clock signal DWCLK1 applied tothe tri-state buffer circuit 115 passes through two inverter circuitsfor timing adjustment.

FIG. 8 is a circuit diagram of the protection circuit 112.

As shown in FIG. 8, the protection circuit 112 has an input node a, anoutput node b, and selection nodes c to e. The input node a is coupledto the output node b of the latch circuit 111 located in the front stageto the protection circuit 112, and the output node b is connected to theinput node a of the latch circuit 113 located in the rear stage to theprotection circuit 112. The selection node c receives the clock signalDQSHLCK, the selection node d receives the protection signal SEL, andthe selection node e is kept at a low level.

The protection circuit 112 includes inverter circuits 201 and 202coupled circularly to each other, an inverter circuit 203 placed betweenthe input node a and the input node of the inverter circuit 201, and aninverter circuit 204 placed between the selection node e and the outputnode b. The inverter circuits 201 to 204 are tri-state types, and areactivated when the corresponding selection signals are high levels. Theprotection signal SEL and an inversion signal generated by inverting theprotection signal SEL are used as an activation signal for the invertercircuits 204 and an activation signal for the inverter circuits 201,respectively. The clock signal DQSHLCK and an inversion signal generatedby inverting the clock signal DQSHLCK are used as an activation signalfor the inverter circuits 203 and an activation signal for the invertercircuits 202, respectively.

In this configuration, when the protection signal SEL is a low level(deactivated state), the protection circuit 112 outputs a signal inputto the input node a, directly from the output node b when the clocksignal DQSHLCK is a high level. When the clock signal DQSHLCK changesfrom a high level to a low level, the protection circuit 112 latches asignal input to the input node a, and outputs the latched signal fromthe output node b during a period in which the clock signal DQSHLCKremains a low level.

When the protection signal SEL is a high level (activated state), on theother hand, the inverter circuit 201 is put in high-impedance state andthe inverter circuit 204 is put in activated state. As a result, a highlevel signal is output from the output node b of the protection circuit112.

Each of the latch circuit blocks 120 has a latch circuit 121, aprotection circuit 122, a latch circuit 123, and a tri-state buffercircuit 124 that are connected in series between any one of thecorresponding data mask lines DWFIFO0 to DWFIFO3 and any one of thecorresponding data mask lines DMB4 to DMB7.

Each of the latch circuits 121 and 123 has an input node a, an outputnode b, and a selection node c, and has the same function as that of thelatch circuits 111, 113, and 114. The selection node c of the latchcircuit 121 is supplied with an inversion signal generated by invertinga clock signal DQSHLCK, and the selection node c of the latch circuit123 is supplied with an output signal from an OR-gate circuit 125. TheOR-gate circuit 125 outputs the logical sum of the protection signal SELand an inversion signal generated by inverting the clock signal DWCLK1.

The tri-state buffer circuit 124 is activated when the clock signalDWCLK1 is a high level, and is put in high-impedance-carrying state whenthe clock signal DWCLK1 is a low level. The clock signal DWCLK1 input tothe tri-state buffer circuit 124 passes through two inverter circuitsfor timing adjustment.

The protection circuit 122 is the same in circuit configuration as theprotection circuit 112 of FIG. 8 except that the protection circuit 122has the input node a coupled to the output node b of the latch circuit121 and the output node b connected to the input node a of the latchcircuit 123. Signals input to the selection nodes c to e of theprotection circuit 122 are therefore the same as signals input to theselection nodes c to e of the protection circuit 112.

In this configuration, when the protection signal SEL is a low level(deactivated state), the protection circuit 122 carries out the samelatch operation as the protection circuit 112 does. When the protectionsignal SEL is a high level (activated state), a high level signal isoutput from the output node b of the protection circuit 122.

The above configuration of the input buffer 17 b and serial/parallelconversion circuit 16 b that process the data mask signals DM isbasically the same as the configuration of the input buffer 17 a andserial/parallel conversion circuit 16 a that process the write data DQ.However, the input buffer 17 a that processes the write data DQ isactivated regardless of the enable signal DMEN, and the serial/parallelconversion circuit 16 a that processes the write data DQ is not providedwith the protection circuits 112 and 122.

FIG. 9 is a timing chart for explaining an effect of this embodiment,showing a case where the operation mode in which the data maskingoperation is enabled and the error check operation is enabled.

In this case, in synchronization with external strobe signals DQST andDQSB, the write data DQ and the data mask signals DM are burst inputfrom the external controller 210 to the semiconductor device 10. Theerror check circuit 90 of FIG. 5 performs CRC operation using the writedata DQ and the data mask signals DM, and compares generated CRC codeswith CRC codes supplied from the controller 210. Through this process,an error included in the write data DQ or data mask signals DM can bedetected.

FIG. 10 is a second timing chart for explaining an effect of thisembodiment, showing a case where the data masking operation is disabledand the error check operation is enabled.

In this case, although the write data DQ are burst input from theexternal controller 210 to the semiconductor device 10 insynchronization with the external strobe signals DQST and DQSB, input ofthe data mask signals DM is not guaranteed because the data maskingoperation is disabled. It is therefore unknown whether the values of theincoming data mask signals DM from the controller 210 correctly matchthe incoming CRC codes from the controller 210 or not. Because CRC codesare generated on the assumption that signals not used for actualoperations (data mask signals DM in this case) among signals used forCRC operation are high levels.

In such a case, according to this embodiment, high level data masksignals DM are internally generated. This allows the semiconductordevice 10 to perform correct CRC operation even if high level data masksignals DM are not supplied to the semiconductor device 10 by thecontroller 210.

FIG. 11 is a circuit diagram of the deserializer 102 according toanother embodiment of the present invention.

The deserializer 102 shown in FIG. 11 is different from the deserializer102 of FIG. 7 in that the protection circuits 112 and 122 are replacedwith protection circuits 112 a and 122 a. The deserializer 102 of FIG.11 is the same as the deserializer 102 of FIG. 7 in other respects. Thesame constituent elements as described in FIG. 7, therefore, will bedenoted by the same reference numerals and overlapping description willbe omitted.

Each of the protection circuits 112 a and 122 a has a configurationgiven by eliminating the selection node e from each of the protectioncircuits 112 and 122, and serves as a latch circuit having a settingfunction of setting the output node b to a high level when theprotection signal SEL becomes a high level. Using these protectioncircuits 112 a and 122 a also realizes the same function as that of thedeserializer 102 of FIG. 8.

In the above embodiment, the deserializer 102 has the function ofinternally generating the data mask signals DM, but the presentinvention is not limited to this embodiment. A circuit different fromthe deserializer 102, e.g., the write FIFO circuit 101 may have such afunction.

FIG. 12 is a functional block diagram of a data processing system 300including the semiconductor device 10 according; to a second embodimentof the present invention.

The data processing system 300 shown in FIG. 12 is composed of thesemiconductor device 10 of FIG. 1 and a controller 310 that controls thesemiconductor device 10. The semiconductor device 10 includes a data businversion circuit 130 that inverts part or the whole of read data DQoutput from the memory cell array 11, according to the data pattern ofthe read data DQ. In other words, the data bus inversion circuit 130performs a data bus inversion operation. The read data DQ having passedthrough the data bus inversion circuit 130 is supplied to the controller310 via an output buffer 141. Data bus inversion signals DBI indicativeof whether the read data DQ has been inverted or not are supplied to thecontroller 310 via an output buffer 142.

The controller 310 has a data bus inversion circuit 312 that receivesthe read data DQ and the data bus inversion signals DBI that aresupplied to the data bus inversion circuit 312 via receivers circuits313 and 314, respectively. The controller 310 further has a main circuit311 that receives the read data DQ having been re-inverted into itsoriginal state by the data bus inversion circuit 312. When the data businversion signals DBI are activated, the data bus inversion circuit 312inverts the logical level of the incoming read data DQ, and therebyre-inverts the read data DQ into its original state. The receivercircuit 314 that receives the data bus inversion signals DBI isactivated when a data bus inversion function is enabled.

FIG. 13 is a diagram for explaining the function of the data businversion circuit 120, including FIG. 13(a) showing the values of readdata DQ input to the data bus inversion circuit 120 and FIG. 13(b)showing the values of read data DQ and data bus inversion signals DBIoutput from the data bus inversion circuit 130. FIG. 13 depicts a casewhere the number of bits (m) making up data processed by the datainput/output terminal 21 is 8 and the burst length (n) of the data is 8bits.

As shown in FIG. 13(b), for each burst output timing, the data businversion signals DBI of one bit are assigned. In the example of FIG.13, therefore, the data bus inversion signals DBI are made up of 8 bits.All logical levels of the 8-bit read data DQ that correspond to burstoutput timings at which data bus inversion signals DBI are at activelevels (low levels in this example) are inverted. In the example of FIG.13(b), bits corresponding to burst output timings D0 to D4 are atinactive levels (high level), while bits corresponding to burst outputtimings D5 to D7 are at active levels (low levels). It is hence observedthat the logic levels of the read data at the burst output timings D5 toD7 shown in FIG. 13(a) are inverted in FIG. 13(b).

The semiconductor device 10 of this embodiment will hereinafter bedescribed more specifically by focusing on the read operation.

FIG. 14 is a block diagram of a part of semiconductor device 10 that isrelated to the read operation.

When the number of bits (m) making up data processed by the datainput/output terminal 21 is 8 and the burst length (n) of the data is 8bits, as described above, a data line DB1 connecting the memory cellarray 11 to the data controller 15 is configured to 64-bit wide, asshown in FIG. 14. The data controller 15 includes an amplifying circuit150 and the data bus inversion circuit 130, which are connected to eachother via a 64-bit wide data line DB2.

The data bus inversion circuit 130 has an analyzer 131 that analyzes thedata pattern of the read data DQ, and thereby generates the data businversion signals DBI, and the data bus inversion circuit 130 furtherhas an invert circuit 132 that inverts the read data DQ based on thedata bus inversion signals DBI. The data bus inversion circuit 130 isactivated when a mode signal MODE3/4 supplied from the mode register 42indicates the data bus inversion function is enabled. The read data DQoutput from the invert circuit 132 is transferred through a 64-bit widedata line DB3 and is supplied to a parallel/serial conversion circuit152 included in the FIFO circuit 16. The data bus inversion signals DBIgenerated by the analyzer 131 are transferred through an 8-bit wide databus inversion line DBIB3 and are supplied to a parallel/serialconversion circuit 153 included in the FIFO circuit 16.

FIG. 15 is a circuit diagram showing a part of the invert circuit 132included in the data bus inversion circuit 130.

As shown in FIG. 15, the invert circuit 132 has invert circuits 160 to167 connected between data lines DB2-i (i=0 to 7) and data lines DB3-i(i=0 to 7), respectively. Each of these invert circuits 160 to 167inverts or does not invert incoming read data DQ0 from the data lineDB2-i and outputs the inverted or non-inverted read data DQ to the dataline DB3-i, and inverts or does not invert incoming write data DQ0 fromthe data line DB3-i and outputs the inverted or non-inverted write dataDQ to the data line DB2-i.

Specifically, the invert circuit 160 has exclusive-OR circuits XNOR1 andXNOR2 that receive a data bus inversion signal DBI0. When the data businversion signal DBI0 is a high level, a data line DB2-0 and a data lineDB3-0 are at the same logical level. When the data bus inversion signalDBI0 is a low level, the data line DB2-0 and the data line DB3-0 are atlogical levels opposite to each other.

Data bus inversion signals DBI0 to DBI7 are each assigned as one-bitsignal to plural read data and write data that are input and outputsimultaneously. The read data DQ0 supplied to the data lines DB2-0 toDB2-7 is 8-bit read data to be burst output, that is, a burst of readdata to be output at different timings. Likewise, write data DQ0supplied to the data lines DB3-0 to DB3-7 is burst input 8-bit writedata, that is, a burst of write data input at different timings. Asshown in FIG. 15, therefore, the data bus inversion signals DBI0 to DBI7are assigned to the data lines DB2-0 to DB2-7 (data lines DB3-0 toDB3-7), respectively, as signals different from each other.

FIG. 14 is referred to again. The parallel/serial conversion circuit 152performs parallel/serial conversion of the read data DQ supplied to theparallel/serial conversion circuit 152 via the 64-bit wide data line DB3and outputs the converted read data DQ serially to an 8-bit wide dataline DB4. The read data DQ is then further transferred through the dataline DB4 to the output buffer 141, which outputs the read data DQ fromthe data input/output terminal 21. In the same manner, theparallel/serial conversion circuit 153 performs parallel/serialconversion of the data bus inversion signals DBI (DBI0 to DBI7) suppliedto the parallel/serial conversion circuit 153 via the 8-bit wide databus inversion line DBIB3. The converted data bus inversion signals DBIare output serially to a 1-bit wide data bus inversion line DBIB4. Thedata bus inversion signals DBI are then further transferred through thedata bus inversion line DBIB4 to the output buffer 142, which outputsthe data bus inversion signal DBI from the DM/DBI terminal 32.

As shown in FIG. 14, the mode signal MODE1/2 is supplied from the moderegister 42 to the multi-purpose register 20. When the mode signalMODE1/2 indicates the multi-purpose register 20 is used, themulti-purpose register 20 is activated.

Test data DQ read out of the multi-purpose register 20 is supplied tothe buffer circuit BF1 via a 64-bit wide data line MPRB. The buffercircuit BF1 is activated in response to an enable signal EN1 output froma control circuit 154. An output signal from the buffer circuit BF1 issupplied to the data line DB3. When the enable signal EN1 is activated,test data DQ read out of the multi-purpose register 20 appears on thedata line DB3 instead of read data DQ read out of the memory cell array11.

The buffer circuit BF2 is connected to the data bus inversion lineDBIB3. When activated by the enable signal EN1, the buffer circuit BF2supplies the data bus inversion signals DBI fixed to a given value (ahigh level), to the data bus inversion line DBIB3. When the enablesignal EN1 is activated, therefore, all lines making up the 8-bit widedata bus inversion line DBIB3 are fixed to a high level.

The control circuit 154 receives the mode signals MODE1/2 and MODE3/4supplied from the mode register 42 and a read enable signal READsupplied from the control logic circuit 44 of FIG. 1, and activatesenable signals EN1 to EN3 based on the mode signals and read enablesignal. The read enable signal READ is activated when a read command isissued from the controller 310.

The operation of the control circuit 154 will be described morespecifically, referring to FIG. 16. Under a condition A where the modesignal MODE1/2 indicates an operation mode in which the multi-purposeregister 20 is used, and the mode signal MODE3/4 indicates an operationmode in which the data bus inversion function is used, the controlcircuit 154 activates the enable signals EN1 to EN3 in response to theread enable signal READ. As a result, the test data DQ is output fromthe data input/output terminal 21 and the DM/DBI terminal 32 is fixed toa high level.

Under a condition B where the mode signal MODE1/2 indicates an operationmode in which the multi-purpose register 20 is not used, and the modesignal MODE3/4 indicates the operation mode in which the data businversion function is used, the control circuit 154 activates the enablesignals EN2 and EN3 in response to the read enable signal READ. As aresult, the read data DQ is output from the data input/output terminal21 and the data bus inversion signals DBI are output from the DM/DBIterminal 32.

Under a condition C where the mode signal MODE1/2 indicates theoperation mode in which the multi-purpose register 20 is not used, andthe mode signal MODE3/4 indicates an operation mode in which the databus inversion function is not used, the control circuit 154 activatesthe enable signal EN2 in response to the read enable signal READ. As aresult, the read data DQ is output from the data input/output terminal21 and the DM/DBI terminal 32 is put in high-impedance-carrying state.

Under a condition D where the mode signal MODE1/2 indicates theoperation mode in which the multi-purpose register 20 is used, and themode signal MODE3/4 indicates the operation mode in which the data businversion function is not used, the control circuit 154 activates theenable signals EN1 and EN2 in response to the read enable signal READ.As a result, the test data DQ is output from the data input/outputterminal 21 and the data bus inversion terminal 32 is put inhigh-impedance-carrying state.

FIG. 17 is a timing chart for explaining a training operation of thesemiconductor device 10 of this embodiment.

In the example of FIG. 17, a mode register set command MR is issued attime t1 in synchronization with the external clock signal CK. As aresult, the data bus inversion function in its disabled state switchesto enabled state.

Subsequently, a mode register set command MR is issued at time t2, whichcauses switchover to the operation mode in which the multi-purposeregister is used. The resulting condition is the condition A of FIG. 16.

In this condition, when the read command RD is issued at time t3, accessis made not to the memory cell array 11 but to the multi-purposeregister 20. Because the enable signal EN1 is activated in thiscondition, the test data DQ saved in the multi-purpose register 20 isread out and transferred to the data line DB3. Meanwhile, all linesmaking up the data bus inversion line DBIB3 are fixed to a high voltagelevel by the buffer circuit BF2.

Subsequently, the enable signals EN2 and EN3 are activated. As a result,the test data DQ is burst output from the data input/output terminal 21as the DM/DBI terminal 32 is fixed to a high level.

A mode register set command MR is then issued at time t4, which causesswitchover to the operation mode in which the multi-purpose register isnot used. Hence the conditions at time t1 to time t2 are restored.

In this manner, according to the semiconductor device 10 of thisembodiment, the DM/DBI terminal 32 is fixed to a high level under thecondition A mentioned above. The semiconductor device 10, therefore, isable to perform the training operation correctly.

Preferred embodiments of the present invention have been describedabove. The present invention is not limited to the above embodiments butmay be modified into various forms of applications on the condition thatthe modification does not deviate from the substance of the invention.It is obvious that modified forms of applications are also included inthe scope of the present invention.

For example, the above embodiments relate to cases where the presentinvention is applied to the DRAM. The present invention, however, isapplied not only to the DRAM but also to various semiconductor memories,such as SRAM, PRAM, ReRAM, MRAM, FeRAM, NAND-type flash memory, andNOR-type flash memory.

What is claimed is:
 1. A method comprising: enabling a register of asemiconductor device, wherein the enabled register is configured toprovide data bus inversion information or data mask information to adata terminal of the semiconductor device; providing, from the registerof the semiconductor device, a first control signal to a control circuitof the semiconductor device, the first control signal includinginformation indicative of an operation mode of an error check operationbeing enabled and an operation mode of a data bus inversion operationbeing disabled; and responsive to the first control signal, providing avoltage level of a signal line coupled to an external terminal of thesemiconductor device at a constant level, the external terminalconfigured to receive the data bus inversion information or the datamask information.
 2. The method of claim 1, further comprising:rendering the signal line into high-impedance at least while the databus inversion operation is disabled.
 3. The method of claim 2, furthercomprising: activating a second enable signal responsive to a readenable signal.
 4. The method of claim 3, further comprising: issuing aread command, from a controller, to activate the read enable signal. 5.The method of claim 1, further comprising: providing, from the register,a second control signal to a control circuit, the second control signalincluding information indicative of the operation mode of the errorcheck operation being enabled and the operation mode of the data businversion operation being disabled.
 6. The method of claim 5, furthercomprising: providing a plurality of enable signals responsive to thefirst and second control signals.
 7. The method of claim 6, furthercomprising: activating a first buffer circuit responsive to a firstenable signal of the plurality of enable signals; and providing anoutput signal of the first buffer circuit to a data line.
 8. The methodof claim 7, activating second and third enable signals of the pluralityof enable signals; and rendering the signal line to a high voltagelevel, wherein the first control signal is high and second controlsignal is high.
 9. The method of claim 8, wherein the operation mode ofthe error check operation corresponds to an enabled mode and theoperation mode of the data bus inversion operation corresponds to anenabled mode.
 10. The method of claim 7, further comprising: performingthe error check operation based, at least in part, on a logic levelassociated with a provided voltage on the signal line.
 11. The method ofclaim 10, further comprising: performing the error check operationfurther based, at least in part, on data that is provided to a datainput/output terminal.
 12. The method of claim 11, wherein the errorcheck operation includes a CRC operation.
 13. The method of claim 10,wherein the error check operation includes an ECC operation.
 14. Amethod comprising: activating; at a semiconductor device, a read enablesignal based on an read command; responsive to receiving a read enablesignal based on the read command, providing first and second modesignals indicative of an operation mode of an error check operationbeing enabled and an operation mode of a data bus inversion operationbeing disabled; and responsive to the first and second mode signals,providing a voltage level of a signal line coupled to an externalterminal of the semiconductor device.
 15. The method of claim 14,further comprising: responsive to the first mode signal indicative ofthe error check operation being disabled, performing read and writeoperations on a memory cell array of the semiconductor device.
 16. Themethod of claim 14, further comprising: responsive to the first modesignal indicative of the error check operation being enabled, performingread and write operations on a multi-purpose register of thesemiconductor device.
 17. The method of claim 14, further comprising:responsive to the second mode signal indicative of the data businversion operation being enabled, providing read to data lines of thesemiconductor device; and providing data bus inversion signals to aparallel/serial conversion circuit coupled to the signal line, whereinthe parallel/serial conversion circuit is configured to provide thevoltage level to the signal line.
 18. The method of claim 14, whereinresponsive to the first mode signal indicative of the error checkoperation being enabled: activating a multi-purpose register of thesemiconductor device, the multi-purpose register configured to outputtest data to a buffer circuit of the semiconductor device; and providinga first enable signal to the buffer circuit; and wherein responsive tothe second mode signal indicative of the data bus inversion operationbeing disabled, rendering the signal line into high-impedance.
 19. Themethod of claim 14, further comprising: enabling a register of thesemiconductor device to provide the first and second mode signals.